MT3S113TU,LF

RF TRANS NPN 5.3V 11.2GHZ UFM

Manufacturer: Toshiba Semiconductor and Storage Category: Bipolar RF Transistors Quantity: 4102 RoHS Status: Supported

Basic Information

Part Number:
MT3S113TU,LF
Encapsulation:
-
Package:
Cut Tape (CT)
Description:
RF TRANS NPN 5.3V 11.2GHZ UFM

Product Parameters

Part Status Active
Mounting Type Surface Mount
Transistor Type NPN
Operating Temperature 150°C (TJ)
Current - Collector (Ic) (Max) 100mA
Power - Max 900mW
Gain 12.5dB
Package / Case 3-SMD, Flat Leads
Supplier Device Package UFM
Noise Figure (dB Typ @ f) 1.45dB @ 1GHz
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max) 5.3V
Frequency - Transition 11.2GHz