MXP120A045FE-T1GE3
SIC MOSFET
Basic Information
- Part Number:
- MXP120A045FE-T1GE3
- Encapsulation:
- -
- Package:
- Tape & Reel (TR)
- Description:
- SIC MOSFET
Product Parameters
| Part Status | Active |
|---|---|
| Supplier Device Package | - |
| FET Type | N-Channel |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | - |
| Package / Case | - |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Power Dissipation (Max) | 212W (Tc) |
| Vgs (Max) | +22V, -10V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 20A, 20V |
| Vgs(th) (Max) @ Id | 2.38V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 75.6 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1958 pF @ 800 V |