MXP120A080FE-T1GE3

SIC MOSFET

Manufacturer: Vishay Siliconix Category: Single FETs, MOSFETs Quantity: 1600 RoHS Status: Supported

Basic Information

Part Number:
MXP120A080FE-T1GE3
Encapsulation:
-
Package:
Tape & Reel (TR)
Description:
SIC MOSFET

Product Parameters

Part Status Active
Supplier Device Package -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type -
Package / Case -
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Power Dissipation (Max) 140W (Tc)
Drain to Source Voltage (Vdss) 1200 V
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
Vgs (Max) +20V, -5V
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
Vgs(th) (Max) @ Id 2.69V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 47.3 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds 1156 pF @ 800 V