N3T080MP120D
1200 V, 80 m SiC MOSFET, TO-247-
Basic Information
- Part Number:
- N3T080MP120D
- Encapsulation:
- -
- Package:
- Tube
- Description:
- 1200 V, 80 m SiC MOSFET, TO-247-
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Package / Case | TO-247-3 |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 188W (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 38A |
| Technology | SiCFET (Silicon Carbide) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 15A, 20V |
| Vgs (Max) | +20V, -5V |
| Supplier Device Package | TO-247-3L |
| Vgs(th) (Max) @ Id | 3V @ 15mA |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 896 pF @ 800 V |