NC1M120C12HTNG
SiC MOSFET N 1200V 12mohm 214A
Basic Information
- Part Number:
- NC1M120C12HTNG
- Encapsulation:
- -
- Package:
- Tube
- Description:
- SiC MOSFET N 1200V 12mohm 214A
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Package / Case | TO-247-4 |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Technology | SiCFET (Silicon Carbide) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 100A, 20V |
| Vgs (Max) | +20V, -5V |
| Current - Continuous Drain (Id) @ 25°C | 214A (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 40mA |
| Input Capacitance (Ciss) (Max) @ Vds | 8330 pF @ 1000 V |
| Power Dissipation (Max) | 938W (Ta) |