NC1M120C12WDCU
SiC MOS Wafer 12mOhm 1200V NiPdA
Basic Information
- Part Number:
- NC1M120C12WDCU
- Encapsulation:
- -
- Package:
- Tray
- Description:
- SiC MOS Wafer 12mOhm 1200V NiPdA
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Drain to Source Voltage (Vdss) | 1200 V |
| Supplier Device Package | Wafer |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 214A (Tc) |
| Vgs (Max) | +22V, -8V |
| Vgs(th) (Max) @ Id | 3.5V @ 40mA |
| Input Capacitance (Ciss) (Max) @ Vds | 8330 pF @ 1000 V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 20A, 20V |