NXH004P120M3F2PTNG

MOSFET 2N-CH 1200V 338A 36PIM

Manufacturer: onsemi Category: FET, MOSFET Arrays Quantity: 1639 RoHS Status: Supported

Basic Information

Part Number:
NXH004P120M3F2PTNG
Encapsulation:
-
Package:
Tray
Description:
MOSFET 2N-CH 1200V 338A 36PIM

Product Parameters

Part Status Active
Mounting Type Chassis Mount
FET Feature -
Package / Case Module
Operating Temperature -40°C ~ 175°C (TJ)
Configuration 2 N-Channel (Half Bridge)
Technology Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Rds On (Max) @ Id, Vgs 5.5mOhm @ 200A, 18V
Vgs(th) (Max) @ Id 4.4V @ 120mA
Gate Charge (Qg) (Max) @ Vgs 876nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 16410pF @ 800V
Supplier Device Package 36-PIM (56.7x62.8)
Current - Continuous Drain (Id) @ 25°C 338A (Tj)
Power - Max 1.1kW (Tj)