NXH008T120M3F2PTHG
MOSFET 4N-CH 1200V 129A 29PIM
Basic Information
- Part Number:
- NXH008T120M3F2PTHG
- Encapsulation:
- -
- Package:
- Tray
- Description:
- MOSFET 4N-CH 1200V 129A 29PIM
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Chassis Mount |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Package / Case | Module |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Current - Continuous Drain (Id) @ 25°C | 129A (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Configuration | 4 N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 454nC @ 20V |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 100A, 18V |
| Vgs(th) (Max) @ Id | 4.4V @ 60mA |
| Input Capacitance (Ciss) (Max) @ Vds | 9129pF @ 800V |
| Power - Max | 371W (Tj) |
| Supplier Device Package | 29-PIM (56.7x42.5) |