NXH015F120M3F1PTG
SILICON CARBIDE (SIC) MODULE ELI
Basic Information
- Part Number:
- NXH015F120M3F1PTG
- Encapsulation:
- -
- Package:
- Bulk
- Description:
- SILICON CARBIDE (SIC) MODULE ELI
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Chassis Mount |
| Grade | - |
| Qualification | - |
| Package / Case | Module |
| Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Configuration | 4 N-Channel (Full Bridge) |
| Technology | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| FET Feature | Depletion Mode |
| Supplier Device Package | 22-PIM (33.8x42.5) |
| Vgs(th) (Max) @ Id | 4.4V @ 30mA |
| Gate Charge (Qg) (Max) @ Vgs | 211nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 4696pF @ 800V |
| Power - Max | 198W (Tj) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 60A, 18V |