NXVF6532M3TG01

SIC POWER MOSFET MODULE 650V, 32

Manufacturer: onsemi Category: FET, MOSFET Arrays Quantity: 1600 RoHS Status: Supported

Basic Information

Part Number:
NXVF6532M3TG01
Encapsulation:
-
Package:
Tube
Description:
SIC POWER MOSFET MODULE 650V, 32

Product Parameters

Mounting Type Through Hole
Part Status Active
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Configuration 4 N-Channel (Full Bridge)
Technology Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 650V
Rds On (Max) @ Id, Vgs 44mOhm @ 15A, 18V
Vgs(th) (Max) @ Id 4V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs 58nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 1215pF @ 400V
Power - Max 65.2W (Tj)
Package / Case 13-SSIP Exposed Pad, Formed Leads
Supplier Device Package APM16