P3M06060G7
SICFET N-CH 650V 44A TO-263-7
Manufacturer:
PN Junction Semiconductor
Category:
Single FETs, MOSFETs
Quantity:
1600
RoHS Status:
Supported
Basic Information
- Part Number:
- P3M06060G7
- Encapsulation:
- -
- Package:
- Tape & Reel (TR)
- Description:
- SICFET N-CH 650V 44A TO-263-7
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Drain to Source Voltage (Vdss) | 650 V |
| Supplier Device Package | D2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Technology | SiCFET (Silicon Carbide) |
| Power Dissipation (Max) | 159W |
| Vgs (Max) | +20V, -8V |
| Current - Continuous Drain (Id) @ 25°C | 44A |
| Rds On (Max) @ Id, Vgs | 79mOhm @ 20A, 15V |
| Vgs(th) (Max) @ Id | 2.2V @ 20mA (Typ) |