P3M06060T3
SICFET N-CH 650V 46A TO220-3
Manufacturer:
PN Junction Semiconductor
Category:
Single FETs, MOSFETs
Quantity:
1600
RoHS Status:
Supported
Basic Information
- Part Number:
- P3M06060T3
- Encapsulation:
- -
- Package:
- Tube
- Description:
- SICFET N-CH 650V 46A TO220-3
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Package / Case | TO-220-2 |
| Drain to Source Voltage (Vdss) | 650 V |
| Supplier Device Package | TO-220-2L |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Current - Continuous Drain (Id) @ 25°C | 46A |
| Technology | SiCFET (Silicon Carbide) |
| Power Dissipation (Max) | 170W |
| Vgs (Max) | +20V, -8V |
| Rds On (Max) @ Id, Vgs | 79mOhm @ 20A, 15V |
| Vgs(th) (Max) @ Id | 2.2V @ 20mA (Typ) |