P3M173K0T3

SICFET N-CH 1700V 4A TO-220-3

Manufacturer: PN Junction Semiconductor Category: Single FETs, MOSFETs Quantity: 1600 RoHS Status: Supported

Basic Information

Part Number:
P3M173K0T3
Encapsulation:
-
Package:
Tube
Description:
SICFET N-CH 1700V 4A TO-220-3

Product Parameters

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Package / Case TO-220-2
Current - Continuous Drain (Id) @ 25°C 4A
Supplier Device Package TO-220-2L
Drive Voltage (Max Rds On, Min Rds On) 15V
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Vgs (Max) +19V, -8V
Power Dissipation (Max) 75W
Rds On (Max) @ Id, Vgs 2.6Ohm @ 600mA, 15V
Vgs(th) (Max) @ Id 2.2V @ 600µA (Typ)