PJB200N03S7-AU_R2_002A1
30V N-CHANNEL ENHANCEMENT MODE M
Manufacturer:
Panjit International Inc.
Category:
Single FETs, MOSFETs
Quantity:
2400
RoHS Status:
Supported
Basic Information
- Part Number:
- PJB200N03S7-AU_R2_002A1
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Description:
- 30V N-CHANNEL ENHANCEMENT MODE M
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6200 pF @ 25 V |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 90A, 10V |
| Power Dissipation (Max) | 3.8W (Ta), 250W (Tc) |
| Supplier Device Package | TO-263-7L |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta), 200A (Tc) |