QH8ME5TCR

MOSFET N/P-CH 100V 2A TSMT8

Manufacturer: ROHM Semiconductor Category: FET, MOSFET Arrays Quantity: 4580 RoHS Status: Supported

Basic Information

Part Number:
QH8ME5TCR
Encapsulation:
-
Package:
Cut Tape (CT)
Description:
MOSFET N/P-CH 100V 2A TSMT8

Product Parameters

Part Status Active
Mounting Type Surface Mount
Technology MOSFET (Metal Oxide)
FET Feature -
Grade -
Qualification -
Operating Temperature 150°C (TJ)
Vgs(th) (Max) @ Id 2.5V @ 1mA
Configuration N and P-Channel
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Package / Case 8-SMD, Flat Leads
Drain to Source Voltage (Vdss) 100V
Supplier Device Package TSMT8
Power - Max 1.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds 90pF @ 50V, 590pF @ 50V
Rds On (Max) @ Id, Vgs 202mOhm @ 2A, 10V, 270mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 10V, 19.7nC @ 10V