QS1200SCM36
1200V 36AMP SiC Mosfet
Basic Information
- Part Number:
- QS1200SCM36
- Encapsulation:
- -
- Package:
- Tube
- Description:
- 1200V 36AMP SiC Mosfet
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Qualification | - |
| Grade | Automotive |
| Package / Case | TO-247-3 |
| Operating Temperature | -55°C ~ 175°C |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V |
| Current - Continuous Drain (Id) @ 25°C | 36A |
| Technology | SiCFET (Silicon Carbide) |
| Supplier Device Package | PG-TO247-3 |
| Vgs (Max) | +25V, -10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| Vgs(th) (Max) @ Id | 3.8V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1001 pF @ 800 V |
| Power Dissipation (Max) | 198W |