QS120SCM80D2P
1200V N-CHANNEL SIC MOSFET 80 M
Basic Information
- Part Number:
- QS120SCM80D2P
- Encapsulation:
- -
- Package:
- Tube
- Description:
- 1200V N-CHANNEL SIC MOSFET 80 M
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Power Dissipation (Max) | 250W (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1001 pF @ 800 V |
| Supplier Device Package | D2PAK-7L |
| Vgs(th) (Max) @ Id | 3.8V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 20 V |