QS1700SCM8
1700v 8AMP SiC Mosfet
Basic Information
- Part Number:
- QS1700SCM8
- Encapsulation:
- -
- Package:
- Tube
- Description:
- 1700v 8AMP SiC Mosfet
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Qualification | - |
| Grade | Automotive |
| Package / Case | TO-247-3 |
| Operating Temperature | -55°C ~ 175°C |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Supplier Device Package | PG-TO247-3 |
| Power Dissipation (Max) | 88W |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 142 pF @ 1000 V |