QSD12HCS65U
SiC Homogeneous Schottky Barrier
Basic Information
- Part Number:
- QSD12HCS65U
- Encapsulation:
- -
- Package:
- Tube
- Description:
- SiC Homogeneous Schottky Barrier
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| Grade | - |
| Qualification | - |
| Package / Case | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Technology | SiC (Silicon Carbide) Schottky |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 12 A |
| Supplier Device Package | TO-247-3L |