QSD6HCS65U
SiC 6AMP 650V Schottky Barrier D
Basic Information
- Part Number:
- QSD6HCS65U
- Encapsulation:
- -
- Package:
- Tube
- Description:
- SiC 6AMP 650V Schottky Barrier D
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Package / Case | TO-247-2 |
| Supplier Device Package | TO-247-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 6 A |
| Current - Average Rectified (Io) | 21A |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 15 µA @ 650 V |
| Capacitance @ Vr, F | 421pF @ 0V, 1MHz |