R8011KNZ4C13

NCH 800V 11A, TO-247AD, HIGH-SPE

Manufacturer: ROHM Semiconductor Category: Single FETs, MOSFETs Quantity: 2200 RoHS Status: Supported

Basic Information

Part Number:
R8011KNZ4C13
Encapsulation:
-
Package:
Cut Tape (CT)
Description:
NCH 800V 11A, TO-247AD, HIGH-SPE

Product Parameters

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs (Max) ±20V
FET Feature -
Grade -
Qualification -
Package / Case TO-247-3
Operating Temperature 150°C (TJ)
Drain to Source Voltage (Vdss) 800 V
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Rds On (Max) @ Id, Vgs 450mOhm @ 5.5A, 10V
Power Dissipation (Max) 139W (Tc)
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 100 V
Supplier Device Package TO-247G
Vgs(th) (Max) @ Id 4.5V @ 5.5mA