R8019KNZ4C13

NCH 800V 19A, TO-247AD, HIGH-SPE

Manufacturer: ROHM Semiconductor Category: Single FETs, MOSFETs Quantity: 2200 RoHS Status: Supported

Basic Information

Part Number:
R8019KNZ4C13
Encapsulation:
-
Package:
Tape & Reel (TR)
Description:
NCH 800V 19A, TO-247AD, HIGH-SPE

Product Parameters

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs (Max) ±20V
FET Feature -
Grade -
Qualification -
Package / Case TO-247-3
Operating Temperature 150°C (TJ)
Drain to Source Voltage (Vdss) 800 V
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Power Dissipation (Max) 208W (Tc)
Current - Continuous Drain (Id) @ 25°C 19A (Ta)
Rds On (Max) @ Id, Vgs 265mOhm @ 9.5A, 10V
Supplier Device Package TO-247G
Vgs(th) (Max) @ Id 4.5V @ 7mA
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 100 V