RQ3N025ATTB1
PCH -80V -2.5A, HSMT8, POWER MOS
Manufacturer:
ROHM Semiconductor
Category:
Single FETs, MOSFETs
Quantity:
4590
RoHS Status:
Supported
Basic Information
- Part Number:
- RQ3N025ATTB1
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Description:
- PCH -80V -2.5A, HSMT8, POWER MOS
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| FET Type | P-Channel |
| Operating Temperature | 150°C (TJ) |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Drain to Source Voltage (Vdss) | 80 V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta), 7A (Tc) |
| Power Dissipation (Max) | 2W (Ta), 14W (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 2.5A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 485 pF @ 40 V |