RS6E122BGTB1
NCH 30V 155A, HSOP8, POWER MOSFE
Manufacturer:
ROHM Semiconductor
Category:
Single FETs, MOSFETs
Quantity:
4100
RoHS Status:
Supported
Basic Information
- Part Number:
- RS6E122BGTB1
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Description:
- NCH 30V 155A, HSOP8, POWER MOSFE
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | 150°C (TJ) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Supplier Device Package | 8-HSOP |
| Package / Case | 8-PowerTDFN |
| Input Capacitance (Ciss) (Max) @ Vds | 3310 pF @ 15 V |
| Current - Continuous Drain (Id) @ 25°C | 155A (Ta), 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.16mOhm @ 90A, 10V |
| Power Dissipation (Max) | 3W (Ta), 89W (Tc) |