S3M0012120K
DIODE MOSFETS SILICON CARBIDES 1
Manufacturer:
SMC Diode Solutions
Category:
Single FETs, MOSFETs
Quantity:
1600
RoHS Status:
Supported
Basic Information
- Part Number:
- S3M0012120K
- Encapsulation:
- -
- Package:
- Tube
- Description:
- DIODE MOSFETS SILICON CARBIDES 1
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Drain to Source Voltage (Vdss) | 1200 V |
| Package / Case | TO-247-4 |
| Technology | SiCFET (Silicon Carbide) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 155A (Tc) |
| Supplier Device Package | TO-247-4 |
| Power Dissipation (Max) | 937W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 40mA |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 100A, 18V |
| Vgs (Max) | +18V, -4V |
| Gate Charge (Qg) (Max) @ Vgs | 347 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6358 pF @ 1000 V |