S3M0025120N
MOSFETS SILICON CARBIDES 1200V 2
Manufacturer:
SMC Diode Solutions
Category:
Single FETs, MOSFETs
Quantity:
1600
RoHS Status:
Supported
Basic Information
- Part Number:
- S3M0025120N
- Encapsulation:
- -
- Package:
- Box
- Description:
- MOSFETS SILICON CARBIDES 1200V 2
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Chassis Mount |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 |
| Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 517W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 20mA |
| Technology | SiCFET (Silicon Carbide) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +18V, -4V |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 48A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 175 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3519 pF @ 1000 V |