SIEH4800EW-T1-GE3
N-CHANNEL 80 V (D-S) 175 C MOSFE
Basic Information
- Part Number:
- SIEH4800EW-T1-GE3
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Description:
- N-CHANNEL 80 V (D-S) 175 C MOSFE
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 278 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 1.15mOhm @ 20A, 10V |
| Package / Case | 8-PowerDFN |
| Current - Continuous Drain (Id) @ 25°C | 34A (Ta), 381A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 29000 pF @ 40 V |
| Power Dissipation (Max) | 3.4W (Ta), 417W (Tc) |
| Supplier Device Package | PowerPAK® 8 x 8 BWL |