SIHG125N65E-GE3
E SERIES POWER MOSFET 650 V (D-
Basic Information
- Part Number:
- SIHG125N65E-GE3
- Encapsulation:
- -
- Package:
- Tube
- Description:
- E SERIES POWER MOSFET 650 V (D-
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | TO-247AC |
| Package / Case | TO-247-3 |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Vgs (Max) | ±30V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Power Dissipation (Max) | 208W (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 12A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1938 pF @ 100 V |