SIJ5623DP-T1-GE3
P-CHANNEL 60 V (D-S) MOSFET 150C
Basic Information
- Part Number:
- SIJ5623DP-T1-GE3
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Description:
- P-CHANNEL 60 V (D-S) MOSFET 150C
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 10A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1575 pF @ 30 V |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Ta), 26.1A (Tc) |
| Power Dissipation (Max) | 4.1W (Ta), 32.9W (Tc) |