SIR5810DP-T1-RE3
N-CHANNEL 80 V (D-S) MOSFET 150C
Basic Information
- Part Number:
- SIR5810DP-T1-RE3
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Description:
- N-CHANNEL 80 V (D-S) MOSFET 150C
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.5 nC @ 10 V |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 40 V |
| Current - Continuous Drain (Id) @ 25°C | 15.5A (Ta), 53.3A (Tc) |
| Power Dissipation (Max) | 3W (Ta), 56.8W (Tc) |