SISS26LDN-T1-UE3

N-CHANNEL 60 V (D-S) 150C MOSFET

Manufacturer: Vishay Siliconix Category: Single FETs, MOSFETs Quantity: 7600 RoHS Status: Supported

Basic Information

Part Number:
SISS26LDN-T1-UE3
Encapsulation:
-
Package:
Cut Tape (CT)
Description:
N-CHANNEL 60 V (D-S) 150C MOSFET

Product Parameters

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 60 V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 15A, 10V
Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
Current - Continuous Drain (Id) @ 25°C 23.7A (Ta), 81.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds 1980 pF @ 30 V