SIZF918BDT-T1-GE3
DUAL N-CHANNEL 30 V (D-S) MOSFET
Basic Information
- Part Number:
- SIZF918BDT-T1-GE3
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Description:
- DUAL N-CHANNEL 30 V (D-S) MOSFET
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair® (6x5) |
| Power - Max | 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 73A (Tc), 41A (Ta), 158A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 10A, 10V, 1.4Ohm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V, 77nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1290pF @ 15V, 3350pF @ 15V |