TK115U65Z5,RQ

N-CH MOSFET, 650 V, 0.115 @10V,

Manufacturer: Toshiba Semiconductor and Storage Category: Single FETs, MOSFETs Quantity: 5600 RoHS Status: Supported

Basic Information

Part Number:
TK115U65Z5,RQ
Encapsulation:
-
Package:
Cut Tape (CT)
Description:
N-CH MOSFET, 650 V, 0.115 @10V,

Product Parameters

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Operating Temperature 150°C
Power Dissipation (Max) 190W (Tc)
Vgs (Max) ±30V
Drain to Source Voltage (Vdss) 650 V
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta)
Rds On (Max) @ Id, Vgs 115mOhm @ 12A, 10V
Package / Case 8-PowerSFN
Supplier Device Package TOLL
Vgs(th) (Max) @ Id 4.5V @ 1.02mA
Input Capacitance (Ciss) (Max) @ Vds 2280 pF @ 300 V