TK125U60Z1,RQ

N-CH MOSFET, 600 V, 0.125 @10V,

Manufacturer: Toshiba Semiconductor and Storage Category: Single FETs, MOSFETs Quantity: 5600 RoHS Status: Supported

Basic Information

Part Number:
TK125U60Z1,RQ
Encapsulation:
-
Package:
Cut Tape (CT)
Description:
N-CH MOSFET, 600 V, 0.125 @10V,

Product Parameters

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Power Dissipation (Max) 150W (Tc)
Operating Temperature 150°C
Drain to Source Voltage (Vdss) 600 V
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Vgs (Max) ±30V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Rds On (Max) @ Id, Vgs 125mOhm @ 6A, 10V
Package / Case 8-PowerSFN
Vgs(th) (Max) @ Id 4V @ 730µA
Supplier Device Package TOLL
Input Capacitance (Ciss) (Max) @ Vds 1620 pF @ 300 V