TP65H035G4QS
650 V 46.5 A GAN FET HIGH VOLTAG
Basic Information
- Part Number:
- TP65H035G4QS
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Description:
- 650 V 46.5 A GAN FET HIGH VOLTAG
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 156W (Tc) |
| Technology | GaNFET (Gallium Nitride) |
| Package / Case | 8-PowerSFN |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 400 V |
| Current - Continuous Drain (Id) @ 25°C | 46.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 4.8V @ 1mA |
| Supplier Device Package | TOLL |