TP65H300G4LSGB-TR
GANFET N-CH 650V 6.5A QFN8X8
Basic Information
- Part Number:
- TP65H300G4LSGB-TR
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Description:
- GANFET N-CH 650V 6.5A QFN8X8
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 650 V |
| Package / Case | 8-VDFN Exposed Pad |
| Power Dissipation (Max) | 21W (Tc) |
| Technology | GaNFET (Gallium Nitride) |
| Gate Charge (Qg) (Max) @ Vgs | 8.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 730 pF @ 400 V |
| Vgs(th) (Max) @ Id | 2.8V @ 500µA |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Supplier Device Package | 8-PQFN (8x8) |
| Rds On (Max) @ Id, Vgs | 312mOhm @ 6.5A, 6V |