TPM7R10CQ5,LQ

N-CH MOSFET, 150 V, 0.0071 @10V,

Manufacturer: Toshiba Semiconductor and Storage Category: Single FETs, MOSFETs Quantity: 11600 RoHS Status: Supported

Basic Information

Part Number:
TPM7R10CQ5,LQ
Encapsulation:
-
Package:
Cut Tape (CT)
Description:
N-CH MOSFET, 150 V, 0.0071 @10V,

Product Parameters

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
FET Feature -
Grade -
Qualification -
Drain to Source Voltage (Vdss) 150 V
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V
Package / Case 8-PowerTDFN
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Operating Temperature 175°C
Vgs(th) (Max) @ Id 4.5V @ 1.2mA
Power Dissipation (Max) 3W (Ta), 250W (Tc)
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs 7.1mOhm @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 75 V
Supplier Device Package 8-SOP Advance (4.9x5.75)