TQM210NH08LDCR RLG

80V, 33A, DUAL N-CHANNEL AUTOMOT

Manufacturer: Taiwan Semiconductor Corporation Category: FET, MOSFET Arrays Quantity: 6600 RoHS Status: Supported

Basic Information

Part Number:
TQM210NH08LDCR RLG
Encapsulation:
-
Package:
Cut Tape (CT)
Description:
80V, 33A, DUAL N-CHANNEL AUTOMOT

Product Parameters

Part Status Active
Technology MOSFET (Metal Oxide)
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Configuration 2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Drain to Source Voltage (Vdss) 80V
Package / Case 8-PowerTDFN
Mounting Type Surface Mount, Wettable Flank
Power - Max 48W (Tc)
Supplier Device Package 8-PDFNU (4.9x5.75)
Current - Continuous Drain (Id) @ 25°C 8.2A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs 21mOhm @ 16.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 639pF @ 40V