TQM250NH10DCR

100V, 31A, DUAL N-CHANNEL AUTOMO

Manufacturer: Taiwan Semiconductor Corporation Category: FET, MOSFET Arrays Quantity: 6500 RoHS Status: Supported

Basic Information

Part Number:
TQM250NH10DCR
Encapsulation:
-
Package:
Cut Tape (CT)
Description:
100V, 31A, DUAL N-CHANNEL AUTOMO

Product Parameters

Part Status Active
Technology MOSFET (Metal Oxide)
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 100V
Package / Case 8-PowerTDFN
Vgs(th) (Max) @ Id 3.6V @ 250µA
Mounting Type Surface Mount, Wettable Flank
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 10V
Power - Max 54W (Tc)
Supplier Device Package 8-PDFNU (4.9x5.75)
Current - Continuous Drain (Id) @ 25°C 7.4A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs 25mOhm @ 15.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 513pF @ 60V