TRS40N120HB,S1Q
1200V40A SIC SCHOTTKY BARRIER DI
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Diode Arrays
Quantity:
1600
RoHS Status:
Supported
Basic Information
- Part Number:
- TRS40N120HB,S1Q
- Encapsulation:
- -
- Package:
- Tube
- Description:
- 1200V40A SIC SCHOTTKY BARRIER DI
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| Grade | - |
| Qualification | - |
| Package / Case | TO-247-3 |
| Diode Configuration | 1 Pair Common Cathode |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Technology | SiC (Silicon Carbide) Schottky |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Supplier Device Package | TO-247 |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 20 A |
| Operating Temperature - Junction | 175°C |
| Current - Average Rectified (Io) (per Diode) | 51A |
| Current - Reverse Leakage @ Vr | 130 µA @ 1200 V |