TSM60NC196CF C0G

600V, 12A, SINGLE N-CHANNEL HIGH

Manufacturer: Taiwan Semiconductor Corporation Category: Single FETs, MOSFETs Quantity: 1600 RoHS Status: Supported

Basic Information

Part Number:
TSM60NC196CF C0G
Encapsulation:
-
Package:
Tube
Description:
600V, 12A, SINGLE N-CHANNEL HIGH

Product Parameters

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs (Max) ±20V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Power Dissipation (Max) 74W (Tc)
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drain to Source Voltage (Vdss) 600 V
Package / Case TO-220-3 Full Pack
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Supplier Device Package ITO-220S
Rds On (Max) @ Id, Vgs 196mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1506 pF @ 300 V