TW027U65C,RQ
N-CH SIC MOSFET, 650 V, 0.027 (T
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Single FETs, MOSFETs
Quantity:
1600
RoHS Status:
Supported
Basic Information
- Part Number:
- TW027U65C,RQ
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Description:
- N-CH SIC MOSFET, 650 V, 0.027 (T
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 3mA |
| Operating Temperature | 175°C |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -10V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Package / Case | 8-PowerSFN |
| Supplier Device Package | TOLL |
| Input Capacitance (Ciss) (Max) @ Vds | 2288 pF @ 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 18 V |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 29A, 18V |