UFB25SC12E1BC3N

MOSFET 4P-CH 1200V 36A MODULE

Manufacturer: onsemi Category: FET, MOSFET Arrays Quantity: 1600 RoHS Status: Supported

Basic Information

Part Number:
UFB25SC12E1BC3N
Encapsulation:
-
Package:
Cut Tape (CT)
Description:
MOSFET 4P-CH 1200V 36A MODULE

Product Parameters

Part Status Active
Mounting Type Chassis Mount
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case Module
Supplier Device Package Module
Technology Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Vgs(th) (Max) @ Id 6V @ 10mA
Current - Continuous Drain (Id) @ 25°C 36A (Tj)
Configuration 4 P-Channel (Full Bridge)
Rds On (Max) @ Id, Vgs 45mOhm @ 25A, 12V
Gate Charge (Qg) (Max) @ Vgs 42.5nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 800V
Power - Max 114W (Tc)