UHB100SC12E1BC3N
MOSFET 2P-CH 1200V 100A MODULE
Basic Information
- Part Number:
- UHB100SC12E1BC3N
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Description:
- MOSFET 2P-CH 1200V 100A MODULE
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Chassis Mount |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | Module |
| Supplier Device Package | Module |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Technology | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Configuration | 2 P-Channel (Half Bridge) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 70A, 12V |
| Vgs(th) (Max) @ Id | 6V @ 40mA |
| Gate Charge (Qg) (Max) @ Vgs | 170nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 5859pF @ 800V |
| Power - Max | 417W (Tc) |