VDM610N180LSA
100V, Dual N Channel MOSFET, RDS
Manufacturer:
VIITOR SEMICONDUCTOR CO., LTD
Category:
FET, MOSFET Arrays
Quantity:
1900
RoHS Status:
Supported
Basic Information
- Part Number:
- VDM610N180LSA
- Encapsulation:
- -
- Package:
- Tape & Reel (TR)
- Description:
- 100V, Dual N Channel MOSFET, RDS
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Configuration | 2 N-Channel (Dual) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Power - Max | 35W |
| Drain to Source Voltage (Vdss) | 100V |
| Package / Case | 8-PowerTDFN |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 20A, 10V |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Supplier Device Package | DFN5060 Dual |
| Input Capacitance (Ciss) (Max) @ Vds | 1065pF @ 50V |