VS-4C10ET07S2L-M3

RECTIFIER, SILICON CARBIDE, 650V

Manufacturer: Vishay General Semiconductor - Diodes Division Category: Types of Rectifier Diodes Quantity: 1600 RoHS Status: Supported
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VS-4C10ET07S2L-M3

Basic Information

Part Number:
VS-4C10ET07S2L-M3
Encapsulation:
-
Package:
Cut Tape (CT)
Description:
RECTIFIER, SILICON CARBIDE, 650V

Product Parameters

Part Status Active
Mounting Type Surface Mount
Grade -
Qualification -
Operating Temperature - Junction -55°C ~ 175°C
Current - Average Rectified (Io) 10A
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB (D2PAK)
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 10 A
Technology SiC (Silicon Carbide) Schottky
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Reverse Leakage @ Vr 80 µA @ 650 V
Capacitance @ Vr, F 440pF @ 1V, 1MHz