VS-4C10ET07T-M3
RECTIFIER, SILICON CARBIDE, 650V
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Types of Rectifier Diodes
Quantity:
1600
RoHS Status:
Supported
Basic Information
- Part Number:
- VS-4C10ET07T-M3
- Encapsulation:
- -
- Package:
- Tube
- Description:
- RECTIFIER, SILICON CARBIDE, 650V
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| Grade | - |
| Qualification | - |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 10 A |
| Technology | SiC (Silicon Carbide) Schottky |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 80 µA @ 650 V |
| Capacitance @ Vr, F | 440pF @ 1V, 1MHz |