WI71100TR
POWER GAN IC DISCRETE 8X8 PDFN
Basic Information
- Part Number:
- WI71100TR
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Description:
- POWER GAN IC DISCRETE 8X8 PDFN
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 700 V |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | +6V, -4V |
| Package / Case | 8-LDFN Exposed Pad |
| Vgs(th) (Max) @ Id | 1.5V @ 10mA |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Supplier Device Package | 8-PDFN (8x8) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2A, 6V |
| Gate Charge (Qg) (Max) @ Vgs | 4.8 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 400 V |