XP10NA8R4H

MOSFET N CH 100V 66A TO-252

Manufacturer: YAGEO XSemi Category: Single FETs, MOSFETs Quantity: 1600 RoHS Status: Supported

Basic Information

Part Number:
XP10NA8R4H
Encapsulation:
-
Package:
Tape & Reel (TR)
Description:
MOSFET N CH 100V 66A TO-252

Product Parameters

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C 66A (Tc)
Supplier Device Package TO-252
Rds On (Max) @ Id, Vgs 8.4mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs 67.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 3248 pF @ 80 V
Power Dissipation (Max) 2W (Ta), 69W (Tc)