IRFB3607PBF
IRFB3607PBF is a 75V, 80A N-Channel HEXFET Power MOSFET from Infineon Technologies (formerly International Rectifier). It features a maximum RDS(on) of 9mΩ at VGS = 10V and a TO-220AB through-hole package.
基础信息
- 零件编号：
- IRFB3607PBF
- 封装：
- -
- 包装：
- Tube
- 描述：
- IRFB3607PBF is a 75V, 80A N-Channel HEXFET Power MOSFET from Infineon Technologies (formerly International Rectifier). It features a maximum RDS(on) of 9mΩ at VGS = 10V and a TO-220AB through-hole package.
产品参数
| 安装类型 | Through Hole |
|---|---|
| 场效应晶体管类型 | N-Channel |
| 技术 | MOSFET (Metal Oxide) |
| 驱动电压（最大导通电阻，最小导通电阻） | 10V |
| 最大栅源电压 | ±20V |
| 场效应晶体管特性 | - |
| 工作温度 | -55°C ~ 175°C (TJ) |
| 等级 | - |
| 认证 | - |
| 供应商器件封装 | TO-220AB |
| 封装 / 外壳 | TO-220-3 |
| 零件状态 | Not For New Designs |
| 漏极至源极电压 (Vdss) | 75 V |
| 最大功耗 | 140W (Tc) |
| 连续漏极电流 (Id) @ 25°C | 80A (Tc) |
| 栅极电荷 (Qg) (最大值) @ Vgs | 84 nC @ 10 V |
| Vgs(th) (Max) @ Id 阈值电压（最大值）@ 漏极电流 | 4V @ 100µA |
| 导通电阻（最大值）@漏极电流，栅源电压 | 9mOhm @ 46A, 10V |
| 输入电容 (Ciss) (最大值) @ Vds | 3070 pF @ 50 V |